High Efficiency Frequency Tunable Inverse Class-E Amplifier in VHF Band

نویسنده

  • Young Kim
چکیده

Abstract This paper proposes the use of an inverse class-E amplifier with a tunable parallel resonator at the output port in order to obtain a high power-added efficiency (PAE) and output power in a wide frequency range. The tunable resonator circuit has a constant Q factor in the operating frequency range, and since the circuit has a varactor diode, the inductor and capacitor values of the resonator can be changed. Further, the inductance value for zero-current switching (ZCS) is implemented a lumped element and the capacitance value is made a distributed element for phase compensation. The inverse class-E amplifier can deliver an output power of 25dBm and can achieve a maximum a PAE of 75% in the frequency range 65-120MHz.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Design of a High Range, High Efficiency Spread Spectrum Transmitter for Audio Communication Applications

This work proposes a direct sequence spread spectrum transmitter with high transmission range and efficiency for audio signals. It is shown that by choosing high process gain for spread spectrum signal the data could reach a range of 55km in the 2.4GHz ISM band. By employing a light modulation scheme, we have a relaxed SNR requirement for having a low bit error rate (BER) which translates to re...

متن کامل

Design of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT

In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...

متن کامل

Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology

In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...

متن کامل

Second Harmonic Reduction of Traveling Wave Tube Amplifier Using Ferrite Material

Traveling Wave Tubes (TWTs) consist of different elements. The most important element of TWT is the RF circuit. RF circuits in helix TWTs need a dielectric support to hold the helix; this support also has an effect in electromagnetic properties of RF circuits. A novel dielectric support is proposed to reduce the second harmonic of helix TWTs. The dielectric support in this structure consists of...

متن کامل

Class-E Power Amplifiers for Pulsed Transmitters

Nowadays the main driving parameters for the radio transmitter research are: energy efficiency, frequency re-configurability and integration. Pulsed transmitter architectures have attracted large interest in the recent years due to their potential to meet these demands. In pulsed transmitters, a highly efficient switch mode power amplifier (SMPA) is used in conjunction with a pulse modulator to...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2011